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FDPF680N10TN-Channel 100 V 12A (Tc) 24W (Tc) Through Hole TO-220F-3
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ABRmicro #.ABR2045-FDPF68-1006726
ManufacturerOnsemi
MPN #.FDPF680N10T
Estimated Lead Time-
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DatasheetFDPF680N10T(PDF)
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Technical Specifications
SeriesPowerTrench®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFDPF680
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1000 pF @ 50 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation24W (Tc)
RDS(on) Drain-to-Source On Resistance68mOhm @ 6A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-220-3 Full Pack
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDPF680N10T is an N-channel MOSFET manufactured by Onsemi designed for efficient power switching applications. It features a maximum drain-source voltage of 100 V and a continuous drain current of 12A when operated under optimal thermal conditions (Tc). The device is housed in a TO-220F-3 package, which facilitates through-hole mounting for robust connections. It offers a low gate threshold voltage of 4.5V at 250µA, allowing it to be driven directly by lower voltage circuits. The MOSFET exhibits a gate charge of 17 nC at 10 V and a typical input capacitance of 1000 pF at 50 V, providing a good balance between switching speed and efficiency. With a power dissipation capability of 24W at Tc, the FDPF680N10T is well-suited for various power management tasks within its specified ratings.
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