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FDPF5N50NZUN-Channel 500 V 3.9A (Tc) 30W (Tc) Through Hole TO-220F-3

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ABRmicro #.ABR2045-FDPF5N-928643
ManufacturerOnsemi
MPN #.FDPF5N50NZU
Estimated Lead Time-
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DatasheetDatasheetFDPF5N50NZU(PDF)
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesUniFET-II™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFDPF5
Continuous Drain Current (ID) @ 25°C3.9A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)485 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation30W (Tc)
RDS(on) Drain-to-Source On Resistance2Ohm @ 1.95A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDPF5N50NZU
Environmental Information
Material Declaration FDPF5N50NZUonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Assembly 11/Mar/2020
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 01/Oct/2021
PCN Packaging
Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDPF5N50NZU is an N-Channel MOSFET manufactured by Onsemi, designed for efficient operation in high-voltage applications. It features a maximum voltage rating of 500 V and a continuous current rating of 3.9A when operating with proper thermal management conditions. Encased in a TO-220F-3 package, this device is suitable for through-hole mounting, offering a power dissipation capability of up to 30W. Additionally, it exhibits an input capacitance of 485 pF at 25 V and a gate threshold voltage tolerance of ±25V. This MOSFET provides reliable performance in environments with demanding electrical requirements.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.