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FDPF3N50NZN-Channel 500 V 3A (Tc) 27W (Tc) Through Hole TO-220F-3

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ABRmicro #.ABR2045-FDPF3N-1003603
ManufacturerOnsemi
MPN #.FDPF3N50NZ
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFDPF3N50NZ(PDF)
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesUniFET-II™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFDPF3
Continuous Drain Current (ID) @ 25°C3A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)9 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)280 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation27W (Tc)
RDS(on) Drain-to-Source On Resistance2.5Ohm @ 1.5A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDPF3N50NZ
Environmental Information
Material Declaration FDPF3N50NZonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Assembly 11/Mar/2020
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 23/Dec/2021
PCN Packaging
Mult Devices 24/Oct/2017Tape and Box/Reel Barcode Update 07/Aug/2014
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDPF3N50NZ is an N-channel MOSFET manufactured by Onsemi, packaged in a TO-220F-3 through-hole configuration. It is designed to handle a maximum drain-source voltage of 500 volts and can carry a continuous current of up to 3 amperes under specified thermal conditions. The MOSFET exhibits an on-state resistance of 2.5 ohms when conducting 1.5 amperes of current with a gate-source voltage of 10 volts. It requires a gate threshold voltage of 5 volts to conduct a drain current of 250 microamperes. With a power dissipation capability of 27 watts in optimal thermal conditions, this component is suitable for various electronic applications where efficient switching and voltage management are required.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.