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FDPF39N20TLDTUN-Channel 200 V 39A (Tc) 37W (Tc) Through Hole TO-220F

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ABRmicro #.ABR2045-FDPF39-966637
ManufacturerOnsemi
MPN #.FDPF39N20TLDTU
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFDP(F)39N20(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFDPF39
Continuous Drain Current (ID) @ 25°C39A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)49 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2130 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation37W (Tc)
RDS(on) Drain-to-Source On Resistance66mOhm @ 19.5A, 10V
Package Type (Mfr.)TO-220F
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDP(F)39N20
Environmental Information
Material Declaration FDPF39N20TLDTUonsemi REACHonsemi RoHS
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 01/Oct/2021
PCN Packaging
Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDPF39N20TLDTU is an N-Channel MOSFET manufactured by Onsemi, designed for switching applications requiring high efficiency and reliability. Encased in a TO-220F package, it supports a maximum voltage of 200V and can conduct currents up to 39A at a case temperature of 25°C, with power dissipation rated at 37W. The device features low gate charge characteristics, with a gate threshold voltage of 5V at a drain current of 250µA, while maintaining a gate charge of 49 nC at 10V. Its through-hole mounting style allows for secure mechanical stability and heat dissipation, making it suitable for integration into a variety of circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.