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FDPF20N50FTN-Channel 500 V 20A (Tc) 38.5W (Tc) Through Hole TO-220F-3
1:$2.8290
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ABRmicro #.ABR2045-FDPF20-938911
ManufacturerOnsemi
MPN #.FDPF20N50FT
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetFDPF20N50FT Datasheet(PDF)
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 2.8290
Ext. Price$ 2.8290
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.8290$2.8290
50$2.2440$112.2000
100$1.9230$192.3130
500$1.7100$854.7810
1000$1.4640$1464.1250
2000$1.3790$2758.2500
5000$1.3230$6614.0630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesUniFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberFDPF20
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)65 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3390 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation38.5W (Tc)
RDS(on) Drain-to-Source On Resistance260mOhm @ 10A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDPF20N50FT is an N-Channel MOSFET manufactured by Onsemi. It operates at a maximum voltage of 500V and a current of 20A (under specific conditions defined by Tc). The MOSFET is designed to handle a power dissipation of up to 38.5W, also defined by the thermal conditions (Tc). Packaged in a TO-220F-3 through-hole form, it offers a resistance of 260 milliohms at a current of 10A and a gate-source voltage of 10V. Additionally, the device can withstand gate-source voltages up to ±30V, making it suitable for various switching applications.
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