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FDPF12N35N-Channel 350 V 12A (Tc) 31.3W (Tc) Through Hole TO-220F-3

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ABRmicro #.ABR2045-FDPF12-924533
ManufacturerOnsemi
MPN #.FDPF12N35
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFDP12N35, FDPF12N35(PDF)
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 13, 2024
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Technical Specifications
SeriesUniFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFDPF1
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)350 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)25 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1110 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation31.3W (Tc)
RDS(on) Drain-to-Source On Resistance380mOhm @ 6A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDP12N35, FDPF12N35
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)