FDP8874N-Channel 30 V 16A (Ta), 114A (Tc) 110W (Tc) Through Hole TO-220-3
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ABRmicro #.ABR2045-FDP887-1014032
ManufacturerOnsemi
MPN #.FDP8874
Estimated Lead Time-
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Datasheet
FDP8874(PDF)
FDP8874(PDF)
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFDP88
Continuous Drain Current (ID) @ 25°C16A (Ta), 114A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)72 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3130 pF @ 15 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation110W (Tc)
RDS(on) Drain-to-Source On Resistance5.3mOhm @ 40A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-220-3
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
PCN Obsolescence/ EOL
Product Drawings
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDP8874 is an N-Channel MOSFET manufactured by Onsemi, characterized by its capacity to handle a voltage of 30 V and a current of 16A when measured at the ambient temperature of the device (Ta), and up to 114A when measured at the case temperature (Tc). It delivers a power dissipation of 110W under Tc conditions and is encapsulated in a TO-220-3 through-hole package. The device exhibits a low on-state resistance of 5.3mOhms at 40A with a gate-source voltage of 10V, and has a total gate charge of 72 nC at the same voltage. The MOSFET supports a gate-source voltage range of up to ±20V, making it suitable for managing significant power levels in compact spaces.
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