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FDP8443N-Channel 40 V 20A (Ta), 80A (Tc) 188W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-FDP844-940016
ManufacturerOnsemi
MPN #.FDP8443
Estimated Lead Time-
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DatasheetDatasheetFDP8443(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFDP84
Continuous Drain Current (ID) @ 25°C20A (Ta), 80A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)185 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9310 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation188W (Tc)
RDS(on) Drain-to-Source On Resistance3.5mOhm @ 80A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDP8443
Environmental Information
onsemi REACHonsemi RoHS
Product Drawings
TO220B03 Pkg Drawing
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDP8443 is an N-Channel power MOSFET manufactured by Onsemi, designed for efficient power handling and switching applications. It operates at a maximum voltage of 40V and can handle continuous drain currents of up to 20A in ambient conditions and 80A when properly mounted to a heatsink (Tc). The device is packaged in a TO-220-3 through-hole configuration, enabling effective thermal dissipation with a total power dissipation capacity of 188W at case temperature. The FDP8443 exhibits a gate threshold of ±20V and a gate charge of 9310 pF at 25V, making it suitable for various electronic circuits requiring reliable switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.