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FDP8441_F085N-Channel 40 V 23A (Ta), 80A (Tc) 300W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-FDP844-1017922
ManufacturerOnsemi
MPN #.FDP8441_F085
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFDP8441_F085(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFDP84
Continuous Drain Current (ID) @ 25°C23A (Ta), 80A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)280 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)15000 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance2.7mOhm @ 80A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDP8441_F085
Environmental Information
onsemi REACHonsemi RoHS
Forum Discussions
On Semiconductor Automotive F085 Status Check
Product Drawings
TO220B03 Pkg Drawing
Video File
Driving Automotive Technology
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDP8441_F085 by Onsemi is an N-Channel MOSFET engineered for efficient power management. Housed in a TO-220-3 package, this component supports a maximum voltage of 40 V and can handle currents up to 23A when used in free air (Ta) and up to 80A with proper case (Tc) conditions. It offers a low on-resistance of 2.7 mOhm at 80A and 10V, indicative of its efficiency in conducting electricity with minimal power loss. With a maximum power dissipation rating of 300W at the case temperature, this MOSFET provides robust performance in demanding environments. Additionally, it features a gate threshold voltage of 4V at 250µA and a typical input capacitance of 15000 pF at 25 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.