Image is for reference only, the actual product serves as the standard.
FDP6030BLN-Channel 30 V 40A (Tc) 60W (Tc) Through Hole TO-220-3

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FDP603-1007631
ManufacturerOnsemi
MPN #.FDP6030BL
Estimated Lead Time-
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDG6301N$0.3590
Mosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
FDT86106LZ$1.1630
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Technical Specifications
SeriesPowerTrench®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFDP60
Continuous Drain Current (ID) @ 25°C40A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1160 pF @ 15 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 175°C (TJ)
Maximum Power Dissipation60W (Tc)
RDS(on) Drain-to-Source On Resistance18mOhm @ 20A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDP6030BL is a semiconductor component manufactured by Onsemi, designed as an N-Channel MOSFET ideal for switching applications. It features a maximum voltage rating of 30V and is capable of handling a continuous current of up to 40A when adequately cooled, showcasing a power dissipation of 60W. The device is housed in a TO-220-3 through-hole package, making it suitable for use in environments where heat dissipation and space are considerations. With an on-resistance of 18mOhm at 20A and 10V, along with a total gate charge of 17 nC at 5V, the FDP6030BL ensures efficient performance in managing current flow in circuits. It also has a gate-source voltage limit of ±20V, contributing to its robustness in diverse electrical environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.