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FDP3632N-Channel 100 V 12A (Ta), 80A (Tc) 310W (Tc) Through Hole TO-220-3

1:$2.9480

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FDP363-999441
ManufacturerOnsemi
MPN #.FDP3632
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFDB3632, FDH3632, FDP3632(PDF)
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In Stock: 617
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.9480
Ext. Price$ 2.9480
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.9480$2.9480
50$2.3400$116.9810
100$2.0050$200.4940
500$1.7830$891.4380
1000$1.5270$1526.8130
2000$1.4380$2875.1250
5000$1.3790$6895.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPowerTrench®
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberFDP36
Continuous Drain Current (ID) @ 25°C12A (Ta), 80A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6000 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation310W (Tc)
RDS(on) Drain-to-Source On Resistance9mOhm @ 80A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDB3632, FDH3632, FDP3632
Environmental Information
Material Declaration FDP3632onsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Asembly Chg 7/May/2020
PCN Design/Specification
Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017Tape and Box/Reel Barcode Update 07/Aug/2014
Product Drawings
TO220B03 Pkg Drawing
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDP3632 is an N-Channel MOSFET manufactured by Onsemi, featuring a voltage rating of 100 V. It can handle a current of up to 12A in ambient conditions (Ta) and 80A with a case temperature (Tc), with the latter scenario also supporting a power dissipation of 310W. The component is designed for through-hole mounting with a TO-220-3 package. It operates with gate-source voltages of 6V and 10V, exhibiting a low on-resistance of 9mOhm when conducting 80A at 10V. This MOSFET is suitable for efficiently switching high currents, benefiting from its low resistance and versatile packaging.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.