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FDP2710-F085N-Channel 250 V 4A (Ta) 403W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-FDP271-929187
ManufacturerOnsemi
MPN #.FDP2710-F085
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFDP2710_F085(PDF)
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In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFDP2710
Continuous Drain Current (ID) @ 25°C4A (Ta)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)101 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5690 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation403W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance47mOhm @ 50A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDP2710_F085
Environmental Information
Material Declaration FDP2710-F085onsemi REACHonsemi RoHS
Forum Discussions
On Semiconductor Automotive F085 Status Check
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 08/Jul/2021
PCN Packaging
Cancellation 16/Sep/2021MPQ change 11/Apr/2019
PCN Part Number
Mult Device Part Number Chg 30/May/2017
Video File
Driving Automotive Technology
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDP2710-F085, manufactured by Onsemi, is an N-Channel MOSFET designed for high-efficiency performance in power management. It can handle a maximum voltage of 250 V and a continuous current of 4A under ambient temperature conditions. For more demanding environments, it is rated to handle up to 403W when adequately heat-sinked in a case temperature scenario. The component features a low on-state resistance of 47 milliohms at 50A with a 10V gate drive, contributing to reduced power losses. It also exhibits a total gate charge of 101 nC at a 10V gate-source voltage. The device is encapsulated in a TO-220-3 through-hole package, making it suitable for various thermal management techniques.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.