The FDP16N50 is a power MOSFET manufactured by Onsemi, featuring an N-channel enhancement mode design. It operates with a drain-source voltage of 500 V and can handle continuous drain currents up to 16A when the case temperature (Tc) is appropriately managed. The device is capable of dissipating up to 200W of power under optimal thermal conditions and is packaged in a TO-220-3 through-hole configuration, allowing for efficient heat dissipation. With a gate threshold voltage of 10V and capable of withstanding gate-source voltages up to ±30V, it also includes a typical input capacitance of 1945 pF at 25 V, giving it suitable switching speed characteristics for various applications.