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FDP12N50NZN-Channel 500 V 11.5A (Tc) 170W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-FDP12N-917162
ManufacturerOnsemi
MPN #.FDP12N50NZ
Estimated Lead Time-
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DatasheetDatasheetFDP(F)12N50NZ(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 13, 2024
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Technical Specifications
SeriesUniFET-II™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFDP12
Continuous Drain Current (ID) @ 25°C11.5A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1235 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation170W (Tc)
RDS(on) Drain-to-Source On Resistance520mOhm @ 5.75A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDP(F)12N50NZ
Environmental Information
Material Declaration FDP12N50NZonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Asembly Chg 7/May/2020
PCN Design/Specification
DataSheet Updates 9/Sep/2016Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 30/Jun/2022
PCN Packaging
Mult Devices 24/Oct/2017
Product Drawings
TO220B03 Pkg Drawing
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)