ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
FDP083N15AN-Channel 150 V 83A (Tc) 294W (Tc) Through Hole TO-220-3

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FDP083-1011950
ManufacturerOnsemi
MPN #.FDP083N15A
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFDP083N15A_F102(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
BS108ZL1GN/A
Onsemi
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
BUH150N/A
Onsemi
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDG6301N$0.3590
Onsemi
Mosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
FDT86106LZ$1.1630
Onsemi
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
HUFA75337S3STN/A
Onsemi
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
HUFA75842S3SN/A
Onsemi
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
NTQD6968R2N/A
Onsemi
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Technical Specifications
SeriesPowerTrench®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFDP083
Continuous Drain Current (ID) @ 25°C83A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)84 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6040 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation294W (Tc)
RDS(on) Drain-to-Source On Resistance8.3mOhm @ 75A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDP083N15A_F102
Environmental Information
onsemi REACHonsemi RoHS
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDP083N15A is an N-Channel MOSFET manufactured by Onsemi. It is designed for high-power applications, capable of handling a continuous current of 83A and withstanding voltages up to 150V. The device is packaged in a TO-220-3 through-hole configuration, which is known for effective power dissipation, supporting up to 294W. It features a low on-resistance of 8.3mOhm at 75A, ensuring efficient performance with minimal power loss. The gate charge characteristics include a gate-to-source voltage rating of ±20V and a capacitance of 6040 pF at 25V, indicating its responsiveness and suitability for switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.