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FDP070AN06A0N-Channel 60 V 15A (Ta), 80A (Tc) 175W (Tc) Through Hole TO-220-3

1:$2.0510

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ABRmicro #.ABR2045-FDP070-1008131
ManufacturerOnsemi
MPN #.FDP070AN06A0
Estimated Lead Time18 Weeks
SampleGet Free Sample
DatasheetDatasheetFDP070AN06A0(PDF)
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In Stock: 128
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.0510
Ext. Price$ 2.0510
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.0510$2.0510
10$1.7040$17.0430
100$1.3570$135.6810
800$1.1480$918.0000
1600$0.9730$1557.2000
2400$0.9250$2221.0500
5600$0.8900$4986.1000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPowerTrench®
Packaging
Tube
Lifecycle StatusActive
Base Product NumberFDP070
Continuous Drain Current (ID) @ 25°C15A (Ta), 80A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)66 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3000 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation175W (Tc)
RDS(on) Drain-to-Source On Resistance7mOhm @ 80A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDP070AN06A0
Environmental Information
Material Declaration FDP070AN06A0onsemi RoHS
PCN Assembly/Origin
Mult Dev Asembly Chg 7/May/2020
PCN Design/Specification
Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017
Product Drawings
TO220B03 Pkg Drawing
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDP070AN06A0 is an N-channel MOSFET manufactured by Onsemi, designed for efficient power management. It features a maximum voltage rating of 60V and can handle a continuous current of 15A when measured at ambient temperature (Ta) and up to 80A when measured with case temperature (Tc), offering a high power dissipation capability of 175W in a through-hole TO-220-3 package. It has a gate-to-source voltage rating of ±20V and exhibits a low on-resistance of 7 milliohms at a current of 80A with a gate voltage of 10V. This MOSFET also includes a total gate charge of 3000 pF measured at 25V, making it suitable for tasks requiring efficient current conduction and minimal power loss.
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