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FDP045N10A-F102N-Channel 100 V 120A (Tc) 263W (Tc) Through Hole TO-220-3

1:$3.4630

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FDP045-1013616
ManufacturerOnsemi
MPN #.FDP045N10A-F102
Estimated Lead Time20 Weeks
SampleGet Free Sample
DatasheetDatasheetFDP045N10A, FDI045N10A(PDF)
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In Stock: 217
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.4630
Ext. Price$ 3.4630
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.4630$3.4630
50$2.7460$137.2750
100$2.3530$235.3440
500$2.0920$1046.0310
1000$1.7900$1790.3130
2000$1.6860$3372.3750
5000$1.6170$8085.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPowerTrench®
Packaging
Tube
Lifecycle StatusActive
Base Product NumberFDP045
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)74 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5270 pF @ 50 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation263W (Tc)
RDS(on) Drain-to-Source On Resistance4.5mOhm @ 100A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDP045N10A, FDI045N10A
Environmental Information
Material Declaration FDP045N10A-F102onsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Mold Chg 28/Oct/2019
PCN Design/Specification
Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017
PCN Part Number
Mult Device Part Number Chg 30/May/2017
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDP045N10A-F102 is a MOSFET manufactured by Onsemi, featuring an N-Channel configuration. It is designed to handle a maximum voltage of 100 V and a current of up to 120 A under specified conditions, with a power dissipation capacity of 263 W. The device is encapsulated in a TO-220-3 package with a through-hole mounting style. It supports a gate-to-source voltage of ±20 V and requires a gate threshold voltage of 10 V for optimal switching performance. This robust MOSFET is suited for high-power applications where efficient switching is required.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.