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FDN5632N-F085N-Channel 60 V 1.7A (Ta) 1.1W (Ta) Surface Mount SOT-23-3

1:$0.5460

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ABRmicro #.ABR2045-FDN563-1022483
ManufacturerOnsemi
MPN #.FDN5632N-F085
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetDatasheetFDN5632N-F085(PDF)
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In Stock: 28413
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.5460
Ext. Price$ 0.5460
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5460$0.5460
10$0.4760$4.7600
100$0.3300$33.0440
500$0.2750$137.5940
1000$0.2340$233.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDN5632
Continuous Drain Current (ID) @ 25°C1.7A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)475 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.1W (Ta)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance82mOhm @ 1.7A, 10V
Package Type (Mfr.)SOT-23-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDN5632N-F085
Environmental Information
Material Declaration FDN5632N-F085onsemi REACHonsemi RoHS
Forum Discussions
On Semiconductor Automotive F085 Status Check
PCN Assembly/Origin
FDN8601/FDN5632Nx/FDN86501LZx 06/Sept/2022
PCN Design/Specification
Marking Lay-out Implementation 07/Oct/2022Marking Lay-out Implementation 15/Nov/2021
PCN Other
Mult DEV Product Bulletin 12/Jun/2024
PCN Packaging
Binary Year Code Marking 15/Jan/2014Mult Devices 24/Oct/2017
PCN Part Number
Mult Device Part Number Chg 30/May/2017
Video File
Driving Automotive Technology
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDN5632N-F085 is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications. It offers a drain-source voltage of 60V and a continuous current rating of 1.7A at a junction temperature (Ta), with a power dissipation of 1.1W. This component is housed in a compact SOT-23-3 package, featuring a gate threshold voltage of 4.5V and 10V. It exhibits a gate charge of 12 nC at 10V and a low on-resistance of 82 mOhm when operating at 1.7A and 10V, making it suitable for efficient switching operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.