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FDMS9408-F085N-Channel 40 V 80A (Tc) 214W (Tj) Surface Mount Power56

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ABRmicro #.ABR2045-FDMS94-934622
ManufacturerOnsemi
MPN #.FDMS9408-F085
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFDMS9408_F085(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDMS94
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)92 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5120 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation214W (Tj)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance1.8mOhm @ 80A, 10V
Package Type (Mfr.)Power56
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDMS9408_F085
Environmental Information
Material Declaration FDMS9408-F085onsemi REACHonsemi RoHS
Forum Discussions
On Semiconductor Automotive F085 Status Check
PCN Design/Specification
Datasheet Update 12/Apr/2016Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 16/Jul/2019
PCN Packaging
Mult Devices 24/Oct/2017
PCN Part Number
Mult Device Part Number Chg 30/May/2017
Video File
Driving Automotive Technology
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMS9408-F085 is an N-Channel MOSFET manufactured by Onsemi, designed for high-power applications with a notable current rating of 80A when mounted on a suitable heat sink. It operates with a maximum drain-source voltage of 40V and can dissipate up to 214W under optimal thermal conditions. Housed in a compact Power56 surface-mount package, this MOSFET features a gate threshold voltage of 10V with a lower threshold measurement of 4V at 250µA, and has a gate-source voltage tolerance of ±20V, allowing for robust performance in demanding environments.
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