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FDMS86581-F085N-Channel 60 V 30A (Tc) 50W (Tj) Surface Mount 8-PQFN (5x6)

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ABRmicro #.ABR2045-FDMS86-1034789
ManufacturerOnsemi
MPN #.FDMS86581-F085
Estimated Lead Time-
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDMS86
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)19 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)881 pF @ 30 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation50W (Tj)
RDS(on) Drain-to-Source On Resistance15mOhm @ 30A, 10V
Package Type (Mfr.)8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-PowerTDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Environmental Information
Material Declaration FDMS86581-F085onsemi REACHonsemi RoHS
Forum Discussions
On Semiconductor Automotive F085 Status Check
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 16/Jul/2019
PCN Packaging
Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMS86581-F085, manufactured by Onsemi, is an N-Channel MOSFET designed for efficiency and reliability in power management applications. It features a maximum drain-source voltage of 60V and can handle continuous currents up to 30A at a case temperature (Tc). Power dissipation is rated at 50W at junction temperature (Tj), ensuring effective thermal management in surface mount configurations. This MOSFET comes in a compact 8-PQFN (5x6 mm) package, facilitating integration into space-constrained designs. It operates with a gate threshold voltage of 4V at 250µA and supports switching with a total gate charge of 19nC at 10V, allowing for effective switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.