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FDMS86202ET120N-Channel 120 V 13.5A (Ta), 102A (Tc) 3.3W (Ta), 187W (Tc) Surface Mount 8-PQFN (5x6)

1:$5.1880

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FDMS86-951837
ManufacturerOnsemi
MPN #.FDMS86202ET120
Estimated Lead Time20 Weeks
SampleGet Free Sample
DatasheetDatasheetFDMS86202ET120(PDF)
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In Stock: 2800
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 5.1880
Ext. Price$ 5.1880
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.1880$5.1880
10$4.3550$43.5520
100$3.5230$352.3250
500$3.1320$1566.1250
1000$2.6810$2680.6880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDMS86202
Continuous Drain Current (ID) @ 25°C13.5A (Ta), 102A (Tc)
Drain-to-Source Voltage (VDS)120 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)64 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4585 pF @ 60 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.3W (Ta), 187W (Tc)
RDS(on) Drain-to-Source On Resistance7.2mOhm @ 13.5A, 10V
Package Type (Mfr.)8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-PowerTDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDMS86202ET120
Environmental Information
Material Declaration FDMS86202ET120onsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Retraction 4/Jan/2023
PCN Design/Specification
Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMS86202ET120, manufactured by Onsemi, is an N-Channel MOSFET designed for surface mount applications and housed in an 8-PQFN package measuring 5x6 mm. It operates at a maximum voltage of 120V, with current handling capabilities of 13.5A in ambient temperature conditions (Ta) and 102A when attached to a suitable heat sink (Tc). The device features a low on-resistance of 7.2mOhm at 13.5A and 10V, making it efficient for switching operations. Additionally, it exhibits a total gate charge of 64 nC at 10V and can withstand gate-source voltages of up to ±20V, ensuring robust performance under various electrical conditions.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.