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FDMS86104N-Channel 100 V 7A (Ta), 16A (Tc) 2.5W (Ta), 73W (Tc) Surface Mount 8-PQFN (5x6)

1:$2.0600

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ABRmicro #.ABR2045-FDMS86-938369
ManufacturerOnsemi
MPN #.FDMS86104
Estimated Lead Time20 Weeks
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In Stock: 8120
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 2.0600
Ext. Price$ 2.0600
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.0600$2.0600
10$1.7120$17.1170
100$1.3620$136.2130
500$1.1530$576.4060
1000$0.9780$977.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDMS86
Continuous Drain Current (ID) @ 25°C7A (Ta), 16A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)16 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)923 pF @ 50 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 73W (Tc)
RDS(on) Drain-to-Source On Resistance24mOhm @ 7A, 10V
Package Type (Mfr.)8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-PowerTDFN
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMS86104 is an N-Channel MOSFET manufactured by Onsemi, designed for efficient switching and power management. It supports a maximum voltage of 100 V and a drain current of up to 7A in environments with low ambient temperature (Ta) and up to 16A when the case temperature (Tc) is managed effectively. The power dissipation is rated at 2.5W (Ta) and can reach up to 73W (Tc), highlighting its capability to handle significant power loads when thermally regulated. Featuring a low on-resistance of 24mOhm at a gate-source voltage of 10V and a current of 7A, it ensures minimal energy loss during operation. The part comes in a compact 8-PQFN package, measuring 5x6 mm, facilitating surface mount assembly in electronic designs.
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