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FDMS86101EN-Channel 100 V 12.4A (Ta), 60A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

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ABRmicro #.ABR2045-FDMS86-994751
ManufacturerOnsemi
MPN #.FDMS86101E
Estimated Lead Time-
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDMS86101
Continuous Drain Current (ID) @ 25°C12.4A (Ta), 60A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)55 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3000 pF @ 50 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 104W (Tc)
RDS(on) Drain-to-Source On Resistance8mOhm @ 13A, 10V
Package Type (Mfr.)8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-PowerTDFN
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMS86101E is a surface-mount N-Channel MOSFET manufactured by Onsemi, housed in an 8-PQFN package measuring 5x6 mm. It is designed to handle up to 100 volts and deliver a continuous current of 12.4 amps in a free-air environment (Ta) or 60 amps with suitable cooling at the case level (Tc). The component features low on-resistance, measuring 8 milliohms at 13 amps and 10 volts, allowing for efficient power handling and minimal energy loss. It can be activated at a gate-source voltage of 4 volts when the gate current is 250 microamperes, making it suitable for applications requiring precision in electrical control with a power dissipation capacity of 2.5 watts at Ta and 104 watts at Tc.
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