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FDMS86101AN-Channel 100 V 13A (Ta), 60A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

1:$2.5810

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ABRmicro #.ABR2045-FDMS86-1019221
ManufacturerOnsemi
MPN #.FDMS86101A
Estimated Lead Time20 Weeks
SampleGet Free Sample
DatasheetDatasheetFDMS86101A(PDF)
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In Stock: 2009
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.5810
Ext. Price$ 2.5810
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.5810$2.5810
10$2.1690$21.6860
100$1.7540$175.4190
500$1.5590$779.3440
1000$1.3350$1334.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDMS86101
Continuous Drain Current (ID) @ 25°C13A (Ta), 60A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)58 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4120 pF @ 50 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 104W (Tc)
RDS(on) Drain-to-Source On Resistance8mOhm @ 13A, 10V
Package Type (Mfr.)8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-PowerTDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDMS86101A
Environmental Information
Material Declaration FDMS86101Aonsemi REACHonsemi RoHS
PCN Assembly/Origin
Cancellation 20/Feb/2020
PCN Design/Specification
Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMS86101A is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications with an 8-PQFN (5x6) package. It is capable of handling a maximum voltage of 100 V and can conduct current levels up to 13A when utilized in free air (Ta) conditions or up to 60A when mounted on a proper heat sink (Tc). The device possesses a low on-resistance of 8 milliohms at 13A, 10V, ensuring efficient operation. The gate threshold voltage is measured at 4V with a gate-source voltage tolerance of up to ±20V. With a power dissipation capacity of 2.5W in free air and 104W when properly cooled (Tc), it is suitable for high-power applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.