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FDMJ1027PP-Channel 20 V 3.2A (Ta) Surface Mount 6-MicroFET (2x2)

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ABRmicro #.ABR2045-FDMJ10-1033325
ManufacturerOnsemi
MPN #.FDMJ1027P
Estimated Lead Time-
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDMJ10
Continuous Drain Current (ID) @ 25°C3.2A (Ta)
Drain-to-Source Voltage (VDS)20 V
FET Feature-
FET TypeP-Channel
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-
Maximum Power Dissipation-
RDS(on) Drain-to-Source On Resistance-
Package Type (Mfr.)6-MicroFET (2x2)
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / Case6-VDFN Exposed Pad
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Environmental Information
onsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMJ1027P by Onsemi is a P-Channel MOSFET designed for efficient electrical switching applications. It features a maximum voltage rating of 20 volts and can handle a continuous current of up to 3.2 amperes at ambient temperature. This component is housed in a compact 6-MicroFET package with dimensions of 2x2 mm, suitable for surface mount technology. The FDMJ1027P provides the advantage of a Metal Oxide Semiconductor structure, ensuring reliable performance in managing electrical loads and signal control within circuits.
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