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FDME410NZTN-Channel 20 V 7A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin

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ABRmicro #.ABR2045-FDME41-1033986
ManufacturerOnsemi
MPN #.FDME410NZT
Estimated Lead Time-
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DatasheetDatasheetFDME410NZT(PDF)
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberFDME41
Continuous Drain Current (ID) @ 25°C7A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1025 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.1W (Ta)
RDS(on) Drain-to-Source On Resistance26mOhm @ 7A, 4.5V
Package Type (Mfr.)MicroFet 1.6x1.6 Thin
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case6-PowerUFDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDME410NZT
Environmental Information
onsemi REACHonsemi RoHS
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
FDME410NZT EOL 15/Aug/2019
PCN Packaging
Mult Devices 24/Oct/2017
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDME410NZT is a surface-mount N-Channel MOSFET manufactured by Onsemi, designed for compact applications with its MicroFET package measuring 1.6mm by 1.6mm. Capable of handling up to 20 volts and a continuous current of 7A at thermal limits (Ta), it also dissipates power up to 2.1W at Ta. It features a low on-state resistance of 26 milliohms at 7A with a gate voltage of 4.5V, ensuring efficient performance. Additionally, the device exhibits an input capacitance of 1025 pF when subjected to 10V, and offers a gate-source voltage rating of ±8V, making it suitable for various switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.