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FDMC86520DCN-Channel 60 V 17A (Ta), 40A (Tc) 3W (Ta), 73W (Tc) Surface Mount Dual Cool ™ 33

1:$2.4020

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FDMC86-1021385
ManufacturerOnsemi
MPN #.FDMC86520DC
Estimated Lead Time20 Weeks
SampleGet Free Sample
DatasheetDatasheetFDMC86520DC(PDF)
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In Stock: 4140
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.4020
Ext. Price$ 2.4020
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.4020$2.4020
10$2.0180$20.1770
100$1.6320$163.2000
500$1.4500$725.1560
1000$1.2420$1242.0630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesDual Cool™, PowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDMC86520
Continuous Drain Current (ID) @ 25°C17A (Ta), 40A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))8V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2790 pF @ 30 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3W (Ta), 73W (Tc)
RDS(on) Drain-to-Source On Resistance6.3mOhm @ 17A, 10V
Package Type (Mfr.)Dual Cool ™ 33
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / Case8-PowerTDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDMC86520DC
Environmental Information
Material Declaration FDMC86520DConsemi REACHonsemi RoHS
PCN Assembly/Origin
Wafer Fab Transfer 29/Sep/2014
PCN Design/Specification
FDMC/T Design 01/Sep.2023
PCN Packaging
Dual Cool Packages New Marking Lay-Out 17/Aug/2023Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMC86520DC is an N-channel MOSFET manufactured by Onsemi, designed for efficient switching applications. It operates at a maximum drain-source voltage of 60 V and can handle current levels of 17A when on a thermally advantageous surface-mount (Ta) and up to 40A on a case (Tc), with power dissipation capacities of 3W and 73W respectively. The component features a gate threshold voltage of 4.5V at 250µA and exhibits an input capacitance of 2790 pF at 30 V. The Dual Cool ™ 33 package ensures effective thermal management, suitable for surface mounting in compact electronic designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.