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FDMC86240N-Channel 150 V 4.6A (Ta), 16A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount 8-MLP (3.3x3.3)
1:$2.0510
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ABRmicro #.ABR2045-FDMC86-1013112
ManufacturerOnsemi
MPN #.FDMC86240
Estimated Lead Time20 Weeks
SampleGet Free Sample
DatasheetFDMC86240(PDF)
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In Stock: 7519
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.0510
Ext. Price$ 2.0510
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.0510$2.0510
10$1.7050$17.0530
100$1.3570$135.6810
500$1.1490$574.2810
1000$0.9740$974.3130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDMC86
Continuous Drain Current (ID) @ 25°C4.6A (Ta), 16A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)905 pF @ 75 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.3W (Ta), 40W (Tc)
RDS(on) Drain-to-Source On Resistance51mOhm @ 4.6A, 10V
Package Type (Mfr.)8-MLP (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-PowerWDFN
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMC86240 is a surface-mount N-Channel MOSFET manufactured by Onsemi, housed in an 8-MLP package with dimensions of 3.3x3.3 mm. It operates at a maximum voltage of 150 V and can handle a current of 4.6A in free air (Ta) and 16A when attached to a suitable heat sink (Tc). The power dissipation capacity is 2.3W in free air and up to 40W with an appropriate heat dissipation setup. It features an on-resistance of 51 milliohms at a gate-source voltage of 10V and a drain current of 4.6A. Additionally, it has a gate threshold voltage of 4V at a drain current of 250µA and a total gate charge of 905 pF at 75 V.
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