FDMC7696N-Channel 30 V 12A (Ta), 20A (Tc) 2.4W (Ta), 25W (Tc) Surface Mount 8-MLP (3.3x3.3)
1:$0.8380
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ABRmicro #.ABR2045-FDMC76-998283
ManufacturerOnsemi
MPN #.FDMC7696
Estimated Lead Time16 Weeks
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Datasheet
FDMC7696(PDF)
FDMC7696(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.8380
Ext. Price$ 0.8380
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.8380$0.8380
10$0.6870$6.8740
100$0.5360$53.5500
500$0.4540$226.8440
1000$0.3690$368.6880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDMC76
Continuous Drain Current (ID) @ 25°C12A (Ta), 20A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1430 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.4W (Ta), 25W (Tc)
RDS(on) Drain-to-Source On Resistance11.5mOhm @ 12A, 10V
Package Type (Mfr.)8-MLP (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-PowerWDFN
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
PCN Packaging
PCN Part Number
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMC7696 is a compact, N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications. This component can handle a maximum voltage of 30V and a continuous current of 12A when tested under conditions at ambient temperature (Ta) and up to 20A when heat-sinked or cooled (Tc). It can dissipate a power of 2.4W in ambient conditions and up to 25W when properly cooled. The device exhibits a capacitance of 1430 pF at 15 V, indicating its efficiency in switching applications. It is housed in an 8-MLP package measuring 3.3 by 3.3 mm, making it suitable for space-constrained designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.