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FDMC7672SN-Channel 30 V 14.8A (Ta), 18A (Tc) 2.3W (Ta), 36W (Tc) Surface Mount 8-MLP (3.3x3.3)

1:$0.9230

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ABRmicro #.ABR2045-FDMC76-950072
ManufacturerOnsemi
MPN #.FDMC7672S
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetDatasheetFDMC7672S(PDF)
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In Stock: 2100
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.9230
Ext. Price$ 0.9230
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.9230$0.9230
10$0.7520$7.5230
100$0.5850$58.5440
500$0.4960$248.0940
1000$0.4050$404.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPowerTrench®, SyncFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDMC7672
Continuous Drain Current (ID) @ 25°C14.8A (Ta), 18A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)42 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2520 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.3W (Ta), 36W (Tc)
RDS(on) Drain-to-Source On Resistance6mOhm @ 14.8A, 10V
Package Type (Mfr.)8-MLP (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 1mA
Package / Case8-PowerWDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDMC7672S
Environmental Information
Material Declaration FDMC7672Sonsemi REACHonsemi RoHS
PCN Assembly/Origin
Qualify 2nd supplier 13/Aug/2020
PCN Design/Specification
Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMC7672S is an N-Channel MOSFET manufactured by Onsemi, designed for surface mounting in a compact 8-MLP package measuring 3.3x3.3 mm. This device is capable of handling a maximum voltage of 30V and current ratings of 14.8A when measured at ambient temperature (Ta) and 18A when measured on a substrate (Tc), with power dissipation capabilities of 2.3W (Ta) and 36W (Tc). The gate-source voltage can withstand up to ±20V, and the device possesses a total gate charge of 42 nC at 10V. This MOSFET is optimized for performance at gate-source voltages of 4.5V and 10V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.