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FDMC7582N-Channel 25 V 16.7A (Ta), 49A (Tc) 2.3W (Ta), 52W (Tc) Surface Mount Power33

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ABRmicro #.ABR2045-FDMC75-1040585
ManufacturerOnsemi
MPN #.FDMC7582
Estimated Lead Time-
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DatasheetDatasheetFDMC7582(PDF)
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In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberFDMC75
Continuous Drain Current (ID) @ 25°C16.7A (Ta), 49A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)28 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1795 pF @ 13 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.3W (Ta), 52W (Tc)
RDS(on) Drain-to-Source On Resistance5mOhm @ 16.7A, 10V
Package Type (Mfr.)Power33
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case8-PowerTDFN
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Extended Links
Datasheets
FDMC7582
Environmental Information
Material Declaration FDMC7582onsemi REACHonsemi RoHS
PCN Assembly/Origin
Wafer 6/8 Inch Addition 16/Jun/2014
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 8/Apr/2021
PCN Packaging
Mult Devices 24/Oct/2017
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMC7582 is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications in a Power33 package. It can handle up to 16.7A when mounted on a standard board and up to 49A with enhanced cooling conditions (when mounted on the case). The power dissipation capability is rated at 2.3W under typical conditions and up to 52W when properly mounted. It features a low on-state resistance of 5 milliohms when operating at 16.7A and a gate voltage of 10V. The device possesses an input capacitance of 1795 pF at 13V and has a gate-source voltage tolerance of ±20V, making it suitable for robust electrical environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.