FDMC610PP-Channel 12 V 80A (Tc) 2.4W (Ta), 48W (Tc) Surface Mount Power33
1:$1.8640
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ABRmicro #.ABR2045-FDMC61-951330
ManufacturerOnsemi
MPN #.FDMC610P
Estimated Lead Time16 Weeks
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Datasheet
FDMC610P(PDF)
FDMC610P(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.8640
Ext. Price$ 1.8640
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.8640$1.8640
10$1.5480$15.4810
100$1.2310$123.1440
500$1.0420$521.1560
1000$0.8840$884.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDMC610
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)12 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)99 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1250 pF @ 6 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.4W (Ta), 48W (Tc)
RDS(on) Drain-to-Source On Resistance3.9mOhm @ 22A, 4.5V
Package Type (Mfr.)Power33
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMC610P is a P-Channel MOSFET manufactured by Onsemi, designed for efficient power management in electronic systems. It operates with a drain-source voltage of 12V and can handle a continuous current of 80A when mounted with adequate thermal considerations on a substrate (Tc), with a power dissipation capability of 48W under the same conditions. In a typical ambient environment (Ta), it supports a power dissipation of 2.4W. This surface-mount device is encapsulated in a Power33 package, offering an on-resistance with gate voltages of 2.5V and 4.5V and supports a gate-source voltage range of ±8V. The gate threshold voltage is approximately 1V when the drain current is 250µA, making it suitable for low-voltage drive applications.
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