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FDMC4D9P20X8P-Channel 20 V 18A (Ta), 75A (Tc) 2.4W (Ta), 40W (Tc) Surface Mount 8-PQFN (3.3x3.3)
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ABRmicro #.ABR2045-FDMC4D-1006775
ManufacturerOnsemi
MPN #.FDMC4D9P20X8
Estimated Lead Time-
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DatasheetFDMC4D9P20X8(PDF)
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDMC4
Continuous Drain Current (ID) @ 25°C18A (Ta), 75A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)109 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10550 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.4W (Ta), 40W (Tc)
RDS(on) Drain-to-Source On Resistance4.9mOhm @ 18A, 4.5V
Package Type (Mfr.)8-PQFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.6V @ 250µA
Package / Case8-PowerWDFN
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMC4D9P20X8 is a P-Channel MOSFET manufactured by Onsemi, designed for surface mount applications. It features a maximum voltage of 20V and carries a current capacity of 18A at ambient temperature (Ta) and 75A when mounted on a thermally capable surface (Tc). It dissipates power up to 2.4W at Ta and 40W at Tc. The MOSFET is contained in an 8-PQFN package measuring 3.3mm by 3.3mm. It has a threshold voltage of 1.6V at 250µA and a capacitance of 10550 pF at 10V, making it suitable for applications requiring efficient power management and compact size.
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