FDMC3612N-Channel 100 V 3.3A (Ta), 16A (Tc) 2.3W (Ta), 35W (Tc) Surface Mount 8-MLP (3.3x3.3)
1:$1.1370
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ABRmicro #.ABR2045-FDMC36-981577
ManufacturerOnsemi
MPN #.FDMC3612
Estimated Lead Time12 Weeks
SampleGet Free Sample
Datasheet
FDMC3612(PDF)
FDMC3612(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.1370
Ext. Price$ 1.1370
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1370$1.1370
10$0.9300$9.2970
100$0.7240$72.3560
500$0.6130$306.5310
1000$0.4990$499.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDMC36
Continuous Drain Current (ID) @ 25°C3.3A (Ta), 16A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)21 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)880 pF @ 50 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.3W (Ta), 35W (Tc)
RDS(on) Drain-to-Source On Resistance110mOhm @ 3.3A, 10V
Package Type (Mfr.)8-MLP (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-PowerWDFN
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMC3612 is an N-Channel MOSFET manufactured by Onsemi, designed for efficient switching applications. It operates at a maximum voltage of 100 V and provides a continuous drain current of 3.3A when mounted on a standard test board (Ta), rising to 16A with optimal thermal management (Tc). The power dissipation is rated at 2.3W under standard conditions (Ta) and up to 35W with enhanced cooling (Tc). This MOSFET is encapsulated in a compact 8-MLP package measuring 3.3mm by 3.3mm, making it suitable for surface mount applications. It has a gate charge of 21 nC at 10 V, a maximum gate-source voltage of ±20V, and input capacitance of 880 pF at 50 V, providing a balance of performance and efficiency for various electronic designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.