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FDMC013P030ZP-Channel 30 V 54A (Tc) 30W (Tc) Surface Mount 8-MLP (3.3x3.3)

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ABRmicro #.ABR2045-FDMC01-1019938
ManufacturerOnsemi
MPN #.FDMC013P030Z
Estimated Lead Time-
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DatasheetDatasheetFDMC013P030Z(PDF)
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDMC013
Continuous Drain Current (ID) @ 25°C54A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)135 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5785 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation30W (Tc)
RDS(on) Drain-to-Source On Resistance7mOhm @ 14A, 10V
Package Type (Mfr.)8-MLP (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-PowerWDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDMC013P030Z
Environmental Information
Material Declaration FDMC013P030Zonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Assembly Add 12/Nov/2018
PCN Design/Specification
Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 8/Apr/2021
PCN Packaging
Mult Devices 24/Oct/2017
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMC013P030Z is a P-Channel MOSFET manufactured by Onsemi, designed for efficient power management in electronic devices. It operates with a maximum voltage of 30V and can carry a current of up to 54A, delivering 30W of power in suitable conditions. This MOSFET features a low on-resistance of 7 milliohms at 14A, with a gate charge capacitance of 5785 pF at 15V, offering fast switching capabilities. It is packaged in a compact 8-MLP (3.3x3.3mm) surface-mount enclosure, making it suitable for high-density board designs. The device also supports a gate-source voltage rating of up to ±25V, providing robust performance in various operating conditions.
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