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FDMC007N08LCDCN-Channel 80 V 64A (Tc) 57W (Tc) Surface Mount 8-PQFN (3.3x3.3)
1:$2.6330
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ABRmicro #.ABR2045-FDMC00-1031961
ManufacturerOnsemi
MPN #.FDMC007N08LCDC
Estimated Lead Time24 Weeks
SampleGet Free Sample
DatasheetFDMC007N08LCDC(PDF)
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In Stock: 3525
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 2.6330
Ext. Price$ 2.6330
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.6330$2.6330
10$2.2120$22.1210
100$1.7880$178.8190
500$1.5910$795.2810
1000$1.3620$1362.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDMC007
Continuous Drain Current (ID) @ 25°C64A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)44 nC @ 10 V
Grade-
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3070 pF @ 40 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation57W (Tc)
Qualification-
RDS(on) Drain-to-Source On Resistance6.8mOhm @ 22A, 10V
Package Type (Mfr.)8-PQFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 130µA
Package / Case8-PowerWDFN
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Datasheets
Environmental Information
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMC007N08LCDC is a MOSFET component manufactured by Onsemi, designed for managing electrical power within electronic devices. It features an N-Channel design with an 80V maximum voltage rating and can handle 64A current at the case temperature (Tc), delivering up to 57W of power. The device is housed in a surface-mount 8-PQFN package measuring 3.3x3.3 mm, making it suitable for compact circuit board designs. The MOSFET exhibits a capacitance of 3070 pF at 40V and operates efficiently with gate-source voltage thresholds of 4.5V and 10V, ensuring reliable performance in power control applications.
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