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FDMA86551LN-Channel 60 V 7.5A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)

1:$0.9830

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FDMA86-988570
ManufacturerOnsemi
MPN #.FDMA86551L
Estimated Lead Time20 Weeks
SampleGet Free Sample
DatasheetDatasheetFDMA86551L(PDF)
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In Stock: 27930
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.9830
Ext. Price$ 0.9830
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.9830$0.9830
10$0.8050$8.0540
100$0.6260$62.5810
500$0.5310$265.6250
1000$0.4320$432.4380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDMA86551
Continuous Drain Current (ID) @ 25°C7.5A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1235 pF @ 30 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.4W (Ta)
RDS(on) Drain-to-Source On Resistance23mOhm @ 7.5A, 10V
Package Type (Mfr.)6-MicroFET (2x2)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case6-WDFN Exposed Pad
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDMA86551L
Environmental Information
Material Declaration FDMA86551Lonsemi RoHS
PCN Assembly/Origin
Qualify 2nd supplier 13/Aug/2020
PCN Design/Specification
Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017Mult Devices 29/Aug/2018
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMA86551L is an N-Channel MOSFET manufactured by ON Semiconductor, designed for efficient power management in electronic devices. It operates at a maximum voltage of 60V and can handle a continuous current of up to 7.5A when mounted on a surface, with a power dissipation rating of 2.4W. Housed in a compact 6-MicroFET package measuring 2x2 mm, this MOSFET features a low on-resistance of 23mOhm at 7.5A with a gate-source voltage of 10V, and a gate charge of 17 nC at 10V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.