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FDMA430NZN-Channel 30 V 5A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)

1:$0.7780

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ABRmicro #.ABR2045-FDMA43-935621
ManufacturerOnsemi
MPN #.FDMA430NZ
Estimated Lead Time16 Weeks
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In Stock: 4986
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 0.7780
Ext. Price$ 0.7780
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7780$0.7780
10$0.6750$6.7470
100$0.4680$46.7500
500$0.3900$194.9690
1000$0.3330$332.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDMA430
Continuous Drain Current (ID) @ 25°C5A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)800 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.4W (Ta)
RDS(on) Drain-to-Source On Resistance40mOhm @ 5A, 4.5V
Package Type (Mfr.)6-MicroFET (2x2)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.5V @ 250µA
Package / Case6-WDFN Exposed Pad
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMA430NZ is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications. It features a maximum voltage rating of 30 V and a current capacity of 5A (Ta), with a power dissipation of 2.4W (Ta). The device is housed in a compact 6-MicroFET package measuring 2x2 mm, making it suitable for space-constrained designs. It showcases a gate charge of 11 nC at 4.5 V and a total input capacitance of 800 pF at 10 V, allowing for efficient switching performance in various electronic circuits.
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