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FDMA420NZN-Channel 20 V 5.7A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)

1:$0.6580

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FDMA42-1012233
ManufacturerOnsemi
MPN #.FDMA420NZ
Estimated Lead Time16 Weeks
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In Stock: 7542
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.6580
Ext. Price$ 0.6580
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6580$0.6580
10$0.5720$5.7160
100$0.3960$39.6310
500$0.3300$165.2190
1000$0.2820$281.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDMA420
Continuous Drain Current (ID) @ 25°C5.7A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)935 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.4W (Ta)
RDS(on) Drain-to-Source On Resistance30mOhm @ 5.7A, 4.5V
Package Type (Mfr.)6-MicroFET (2x2)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.5V @ 250µA
Package / Case6-WDFN Exposed Pad
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMA420NZ is an N-Channel MOSFET manufactured by Onsemi, designed for applications requiring efficient power management and control. It operates at a maximum voltage of 20 V with a continuous current rating of 5.7A when mounted in a surface configuration. Housed in a compact 6-MicroFET package measuring 2x2 mm, it is suitable for high-density designs. The device features a low gate charge of 12 nC at 4.5 V and a minimal on-state resistance of 30 mOhm at 5.7A and 4.5V, ensuring efficient performance. Additionally, it provides a gate-source threshold voltage of 1.5V at 250 µA, optimizing its switching capabilities.
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