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FDMA0104N-Channel 20 V 9.4A (Ta) 1.9W (Ta) Surface Mount 6-MicroFET (2x2)

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ABRmicro #.ABR2045-FDMA01-999958
ManufacturerOnsemi
MPN #.FDMA0104
Estimated Lead Time-
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DatasheetDatasheetFDMA0104(PDF)
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDMA01
Continuous Drain Current (ID) @ 25°C9.4A (Ta)
Drain-to-Source Voltage (VDS)20 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17.5 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1680 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.9W (Ta)
RDS(on) Drain-to-Source On Resistance14.5mOhm @ 9.4A, 4.5V
Package Type (Mfr.)6-MicroFET (2x2)
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case6-WDFN Exposed Pad
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Environmental Information
PCN Design/Specification
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMA0104 is a surface-mount N-Channel MOSFET designed by Onsemi. It operates at a voltage of 20 V and has a current capacity of 9.4A when measured at ambient temperature. The device features a power dissipation of 1.9W under the same conditions. Encased in a compact 6-MicroFET package with dimensions of 2x2 mm, this MOSFET offers a gate charge of 17.5 nC at 4.5 V and a threshold voltage of 1V at a specified current of 250µA. Its small form factor and electrical characteristics make it suitable for efficient switching tasks in constrained spaces.
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