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FDI2532N-Channel 150 V 8A (Ta), 79A (Tc) 310W (Tc) Through Hole TO-262 (I2PAK)

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ABRmicro #.ABR2045-FDI253-906860
ManufacturerOnsemi
MPN #.FDI2532
Estimated Lead Time-
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DatasheetDatasheetFDB,P,I2532(PDF)
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 6, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFDI2532
Continuous Drain Current (ID) @ 25°C8A (Ta), 79A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)107 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5870 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation310W (Tc)
RDS(on) Drain-to-Source On Resistance16mOhm @ 33A, 10V
Package Type (Mfr.)TO-262 (I2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Extended Links
Datasheets
FDB,P,I2532
Environmental Information
onsemi RoHS
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)