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FDH5500N-Channel 55 V 75A (Tc) 375W (Tc) Through Hole TO-247-3

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ABRmicro #.ABR2045-FDH550-1002909
ManufacturerOnsemi
MPN #.FDH5500
Estimated Lead Time-
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DatasheetDatasheetFDH5500(PDF)
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In Stock: 18
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesUltraFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFDH550
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)268 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3565 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation375W (Tc)
RDS(on) Drain-to-Source On Resistance7mOhm @ 75A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
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Datasheets
Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDH5500 is an N-Channel MOSFET manufactured by Onsemi, designed to handle high current and power applications with its robust specifications. It is capable of handling a maximum voltage of 55V and a continuous current of 75A under specific thermal conditions. The MOSFET has a power dissipation of 375W, suitable for demanding environments. It features a low on-resistance of 7mOhm at 75A and 10V, making it efficient in minimizing power losses. Packaged in a TO-247-3 through-hole configuration, the FDH5500 is equipped with a gate threshold voltage of 4V at 250µA and an input capacitance of 3565 pF at 25V, highlighting its proficiency in fast switching applications.
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