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FDH5500N-Channel 55 V 75A (Tc) 375W (Tc) Through Hole TO-247-3
N/A
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ABRmicro #.ABR2045-FDH550-1002909
ManufacturerOnsemi
MPN #.FDH5500
Estimated Lead Time-
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DatasheetFDH5500(PDF)
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Technical Specifications
SeriesUltraFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFDH550
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)268 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3565 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation375W (Tc)
RDS(on) Drain-to-Source On Resistance7mOhm @ 75A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
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Datasheets
Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDH5500 is an N-Channel MOSFET manufactured by Onsemi, designed to handle high current and power applications with its robust specifications. It is capable of handling a maximum voltage of 55V and a continuous current of 75A under specific thermal conditions. The MOSFET has a power dissipation of 375W, suitable for demanding environments. It features a low on-resistance of 7mOhm at 75A and 10V, making it efficient in minimizing power losses. Packaged in a TO-247-3 through-hole configuration, the FDH5500 is equipped with a gate threshold voltage of 4V at 250µA and an input capacitance of 3565 pF at 25V, highlighting its proficiency in fast switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.