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FDH44N50N-Channel 500 V 44A (Tc) 750W (Tc) Through Hole TO-247-3

1:$7.9070

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FDH44N-1013648
ManufacturerOnsemi
MPN #.FDH44N50
Estimated Lead Time30 Weeks
SampleGet Free Sample
DatasheetDatasheetFDH44N50(PDF)
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In Stock: 1336
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 7.9070
Ext. Price$ 7.9070
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$7.9070$7.9070
30$6.3160$189.4650
120$5.6500$678.0450
510$4.9860$2543.0190
1020$4.4880$4577.7600
2010$4.2050$8452.8040
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberFDH44
Continuous Drain Current (ID) @ 25°C44A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)108 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5335 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation750W (Tc)
RDS(on) Drain-to-Source On Resistance120mOhm @ 22A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDH44N50
Environmental Information
Material Declaration FDH44N50onsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev 03/Nov/2023
PCN Design/Specification
Dimension/Color Change 24/Feb/2021Logo 17/Aug/2017
PCN Packaging
Mult Devices 24/Oct/2017Packing quantity increase 28/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDH44N50 is a power MOSFET manufactured by Onsemi, designed as an N-Channel device capable of handling a maximum voltage of 500 V and a current of 44A under specific conditions (Tc). It features a substantial power dissipation capacity of up to 750W (Tc) and comes in a TO-247-3 through-hole package, facilitating heat dissipation and physical robustness for various circuit implementations. With a gate charge capacitance of 5335 pF at 25 V and a threshold voltage resilience of ±30V, this MOSFET exhibits a low on-state resistance of 120mOhm when conducting 22A at a gate-source voltage of 10V, ensuring efficient performance for high power and high-frequency applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.