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FDH3632N-Channel 100 V 12A (Ta), 80A (Tc) 310W (Tc) Through Hole TO-247-3
1:$4.1380
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ABRmicro #.ABR2045-FDH363-1007303
ManufacturerOnsemi
MPN #.FDH3632
Estimated Lead Time27 Weeks
SampleGet Free Sample
DatasheetFDB3632, FDH3632, FDP3632(PDF)
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In Stock: 299
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 4.1380
Ext. Price$ 4.1380
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.1380$4.1380
30$3.2760$98.2710
120$2.8080$336.9830
510$2.4960$1272.8640
1020$2.1380$2180.5050
2010$2.0120$4044.8740
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesPowerTrench®
Packaging
Tube
Lifecycle StatusActive
Base Product NumberFDH363
Continuous Drain Current (ID) @ 25°C12A (Ta), 80A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6000 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation310W (Tc)
RDS(on) Drain-to-Source On Resistance9mOhm @ 80A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDH3632 is an N-channel MOSFET manufactured by Onsemi, housed in a TO-247-3 through-hole package. It is rated for a maximum drain-source voltage of 100 volts. The device can handle a current of up to 12A in a free air (Ta) environment and 80A when attached to a suitable heat sink (Tc), with a power dissipation of 310 watts in the latter configuration. The total gate charge is 110 nC when driven at 10 volts. It operates with threshold voltages of 6 volts and 10 volts, and it specifies a gate-source voltage of 4 volts at a current of 250 microamperes.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.