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FDFS6N754N-Channel 30 V 4A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

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ABRmicro #.ABR2045-FDFS6N-934010
ManufacturerOnsemi
MPN #.FDFS6N754
Estimated Lead Time-
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DatasheetDatasheetFDFS6N754(PDF)
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDFS6
Continuous Drain Current (ID) @ 25°C4A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET FeatureSchottky Diode (Isolated)
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)299 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.6W (Ta)
RDS(on) Drain-to-Source On Resistance56mOhm @ 4A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDFS6N754
Environmental Information
onsemi RoHS
PCN Design/Specification
Logo 17/Aug/2017Mold Compound 12/Dec/2007
PCN Obsolescence/ EOL
Mult Devices 31/Jan/2019
PCN Packaging
Mult Devices 24/Oct/2017Mult MSL1 Pkg Chg 20/Dec/2018
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDFS6N754 is an N-Channel MOSFET manufactured by Onsemi, designed for efficient electrical switching and amplification. It operates at a maximum voltage of 30 V and can handle a continuous current of up to 4A at ambient temperature with a power dissipation capacity of 1.6W. Packaged in a surface mount 8-SOIC, it offers a total gate charge of 299 pF when subjected to 15 V, and maintains an on-resistance of 56 mOhm when conducting 4A with a gate-source voltage of 10V. This makes it suitable for compact circuit designs where effective power management is essential.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.