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FDFMA2P853TP-Channel 20 V 3A (Ta) 1.4W (Ta) Surface Mount 7-SOIC

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ABRmicro #.ABR2045-FDFMA2-965419
ManufacturerOnsemi
MPN #.FDFMA2P853T
Estimated Lead Time-
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DatasheetDatasheetFDFMA2P853T(PDF)
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In Stock: 12
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDFMA2
Continuous Drain Current (ID) @ 25°C3A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)6 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)435 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.4W (Ta)
RDS(on) Drain-to-Source On Resistance120mOhm @ 3A, 4.5V
Package Type (Mfr.)7-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.3V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width), 7 Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDFMA2P853T
Environmental Information
onsemi REACHonsemi RoHS
PCN Design/Specification
Marking Content 19/Nov/2013
PCN Obsolescence/ EOL
Multiple Devices 11/Mar/2013
PCN Part Status Change
Status Chg 22/Feb/2017
Video File
Brushless DC Motor Control | Datasheet Preview
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDFMA2P853T is a P-channel MOSFET manufactured by Onsemi, designed for surface mount applications and packaged in a 7-SOIC form factor. This component can handle up to 20 V and 3 A, with a power dissipation of 1.4 W when mounted appropriately. It features a gate charge of 435 pF at 10 V and includes an isolated Schottky diode with an ESD protection level of ±8V, making it suitable for various electronic circuits requiring efficient power management and control.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.