The FDD86102LZ by Onsemi is a surface-mount N-channel MOSFET designed for efficient power management. With a maximum voltage rating of 100 V and current capabilities of 8A at ambient temperature (Ta) and 35A at case temperature (Tc), it provides a balance of power handling and thermal performance. The power dissipation is rated at 3.1W in ambient conditions and 54W when properly heatsinked on the case (Tc). Featuring a low on-state resistance of 22.5mOhm at 8A and 10V, it ensures minimal power loss during operation. The device, housed in a TO-252AA package, has a gate threshold voltage of 3V for 250µA and a total gate charge capacitance of 1540 pF at 50 V, reflecting its capability in switching applications without reference to specific uses.