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FDD8445-F085N-Channel 40 V 70A (Tc) 79W (Tc) Surface Mount TO-252AA
N/A
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ABRmicro #.ABR2045-FDD844-928457
ManufacturerOnsemi
MPN #.FDD8445-F085
Estimated Lead Time-
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DatasheetFDD8445-F085(PDF)
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberFDD844
Continuous Drain Current (ID) @ 25°C70A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)59 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4050 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation79W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance8.7mOhm @ 50A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDD8445-F085 is an N-channel MOSFET manufactured by Onsemi, featuring a maximum voltage of 40V and a continuous current rating of 70A when measured at the case temperature (Tc). This surface mount device, using a TO-252AA package, is capable of dissipating up to 79W of power when properly mounted on a heat-sinking surface. It has a total gate charge of 59 nC at a gate voltage of 10V, making it suitable for tasks that require efficient switching capabilities. This MOSFET is designed for reliable operation within its specified electrical characteristics and thermal limits.
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