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FDD8444-F085N-Channel 40 V 145A (Tc) 153W (Tc) Surface Mount TO-252AA

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ABRmicro #.ABR2045-FDD844-990629
ManufacturerOnsemi
MPN #.FDD8444-F085
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFDD8444_F085(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDD844
Continuous Drain Current (ID) @ 25°C145A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)116 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6195 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation153W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance5.2mOhm @ 50A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDD8444_F085
Environmental Information
onsemi REACHonsemi RoHS
Forum Discussions
On Semiconductor Automotive F085 Status Check
PCN Design/Specification
Description Chg 01/Apr/2016Logo 17/Aug/2017
PCN Obsolescence/ EOL
1Q2018 Product EOL 31/Mar/2018
PCN Packaging
Dpak Dimension 17/Apr/2008Tape and Box/Reel Barcode Update 07/Aug/2014
PCN Part Number
Mult Device Part Number Chg 30/May/2017
Video File
Driving Automotive Technology
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Onsemi FDD8444-F085 is a surface-mount N-Channel MOSFET designed for power applications. It is housed in a TO-252AA package, providing a compact form factor suitable for a variety of electronic designs. This MOSFET is capable of handling up to 40 V and offers a continuous drain current of 145A when measured at a case temperature (Tc). It also features a power dissipation rating of 153W at Tc. With a gate threshold voltage of 10V and a capacitance of 6195 pF at 25V, this MOSFET is suited for high-efficiency switching and amplification tasks in electronic circuits.
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