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FDD6N50TMN-Channel 500 V 6A (Tc) 89W (Tc) Surface Mount TO-252AA

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ABRmicro #.ABR2045-FDD6N5-1019726
ManufacturerOnsemi
MPN #.FDD6N50TM
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFDD6N50, FDU6N50(PDF)
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesUniFET™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberFDD6N50
Continuous Drain Current (ID) @ 25°C6A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)16.6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9400 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation89W (Tc)
RDS(on) Drain-to-Source On Resistance900mOhm @ 3A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDD6N50, FDU6N50
Environmental Information
Material Declaration FDD6N50TMonsemi RoHS
PCN Assembly/Origin
Mult Dev 13/Aug/2020
PCN Design/Specification
Description Chg 01/Apr/2016Logo 17/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 30/Jun/2022
PCN Packaging
Mult Devices 24/Oct/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDD6N50TM is a surface-mount N-Channel MOSFET manufactured by Onsemi, designed to handle a maximum voltage of 500V and a continuous drain current of 6A at its case temperature. It offers a power dissipation of 89W when mounted on a suitable heatsink to maintain the case temperature. The device is encased in a TO-252AA package, suitable for efficient space utilization in electronic assemblies. It features a gate threshold voltage of 5V with a gate current of 250µA, and an on-resistance of 900mOhm at a 10V gate-source voltage, allowing for effective switching performance. The total gate charge required for this MOSFET at 10V is 16.6 nC, supporting its use in circuits requiring fast and efficient switching capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.